s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t feat ur es v d s ( v ) = - 30v i d = - 3.0a ( v g s = - 10v ) r d s ( o n ) 80m ( v g s = - 10v ) r d s ( o n ) 140m ( v g s = - 4.5v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 g s d 2 3 1 a bs olut e max imum r at ings ta = 25 s y m bol 5 s ec uni t v d s - 30 v g s 20 t a = 25 - 3 t a = 70 - 2.5 i d m - 12 t a = 25 1.25 t a = 70 0.8 t her m al res i s tanc e.j unc ti on- to- a m bi ent t 10 s ec r t h ja 100 /w j unc ti on t em per atur e t j 150 j unc ti on and s tor age t em per atur e range t st g - 55 to 150 v p ar am eter i d conti nuous dr ai n cur r ent p ul s ed dr ai n cur r ent a w p ow er di s s i pati on p d g ate- s our c e v ol tage dr ai n- s our c e v ol tage p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h p-cha nne l mo s f e t si2 3 0 7 ds-hf ( k i 2 3 0 7 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = -250u a , v g s = 0v - 30 v v d s = - 24v , v g s = 0v - 1 v d s = - 24v , v g s = 0v , t j = 55 - 10 g ate- b ody l eak age c ur r ent i g s s v d s = 0v , v g s = 20v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s i d = - 250 a - 1.0 v v g s = - 10v , i d = - 3a 64 80 v g s = - 4.5v , i d = - 2.5a 103 140 o n s tate dr ai n c ur r ent * 1 i d ( o n ) v g s = - 10v , v d s = - 5v - 6 a f or w ar d t r ans c onduc tanc e * 1 g fs v d s = - 10v , i d = - 3a 4. 5 s input capac i tanc e c i ss 565 o utput capac i tanc e c o ss 126 rev er s e t r ans fer capac i tanc e c r ss 75 t otal g ate char ge q g 10 15 g ate s our c e char ge q g s 1.9 g ate dr ai n char ge q g d 2 t ur n- o n del ay t i m e t d ( o n ) 10 20 t ur n- o n ri s e t i m e t r 9 20 t ur n- o ff del ay t i m e t d ( o f f ) 27 50 t ur n- o ff f al l t i m e t f 7 16 m ax i m um b ody - di ode conti nuous cur r ent i s - 1.25 a di ode f or w ar d v ol tage v s d i s = - 1.25a ,v g s = 0 - 1.2 v z er o g ate v ol tage dr ai n cur r ent i d s s a m r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e * 1 pf nc v g s = - 10v , v d s = - 15v , r l = 15 ,r g e n = 6 i d = - 1.0a v g s = 0v , v d s = - 15v , f= 1m hz ns v g s = - 15v , v d s = - 15v , i d = - 3a * 1p ul s e tes t: p w 300u s duty c y c l e 2% . mar k ing m ar k i ng a 7* f -3.0 p-cha nne l mo s f e t si2 3 0 7 ds-hf ( k i 2 3 0 7 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m os f e t ty pic al c har ac t er is it ic s 0 2 4 6 8 10 12 0 2 4 6 8 10 on-resistance vs. drain current s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o v d s ? drain-to-source v oltage (v) ? drain current (a) i d v g s ? gate-to-source v oltage (v) ? drain current (a) i d 0 2 4 6 8 10 12 0 1 2 3 4 5 t c = ?55 c 125 c 3 v 4 v 0 100 200 300 400 500 600 700 800 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 ?50 0 50 100 150 0 2 4 6 8 10 0 2 4 6 8 10 0 0.2 0.4 0.6 0 2 4 6 8 10 ga t e c ha r ge ? gate-to-source v oltage (v) q g ? t o ta l ga te char g e ( n c ) v d s ? drain-to-source v oltage (v) c ? capacitance (pf) v gs c r s s c os s c i s s v d s = 15 v i d = 3 a ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature v g s = 10 v i d = 3 a t j ? junction t emperature ( c) (normalized) ? on-resistance r ds(on) v g s = 10 v v g s = 4.5 v 25 c v g s = 10 thru 5 v b b b b p-cha nne l mo s f e t si2 3 0 7 ds-hf ( k i 2 3 0 7 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m os f e t . ty pic al c har ac t er is it ic s 0.01 0.10 1.00 0.01 0 1 8 12 2 6 10 500 0.1 10 100 0.1 1.0 10.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 power (w) ?0.4 ?0.2 0.0 0.2 0.4 0.6 ?50 ?25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s r e w o p e s l u p e l g n i s e g a t l o v d l o h s e r h t normalized thermal t ransient impedance, junction-to-ambient square w ave pulse duration (sec) normalized ef fective t ransient thermal impedance v sd v ) v ( e g a t l o v n i a r d - o t - e c r u o s ? g s ? gate-to-source v oltage (v) ? source current (a) i s t j ? t emperature ( c) t ime (sec) v ariance (v) v gs(th) i d = ?3 a i d = 250 a t a = 25 c single pulse t j = 25 c t j = 150 c 2 10 ?3 10 ?2 0 0 5 0 1 1 10 ?1 10 ?4 100 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 ? on-resistance ( r ds(on) ) 1. duty cycle, d = 2. per unit base = r t hj a = 130 c/w 3. t j m ? t a = p d m z t hj a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m 4 b b b b b p-cha nne l mo s f e t si2 3 0 7 ds-hf ( k i 2 3 0 7 d s - h f)
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